共 50 条
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- [3] PHOTOCONDUCTIVITY ASSOCIATED WITH FREE EXCITONS IN GAAS PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 50 (01): : 263 - &
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- [6] Investigation of characteristics of SAW filter using undoped GaN epitaxial layer grown by MOCVD on sapphire substrate 2001 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2, 2001, : 257 - 260
- [7] High mobility GaAs intrinsic epitaxial layer grown by MOCVD Bandaoti Guangdian/Semiconductor Optoelectronics, 2002, 23 (06):
- [8] FURTHER-STUDIES OF PERSISTENT PHOTOCONDUCTIVITY IN HIGH-PURITY UNDOPED THICK EPITAXIAL GAAS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 353 - 354
- [9] GAAS(001) EPITAXIAL LAYER ON SOS USING A SPECIFICALLY DESIGNED MOCVD SYSTEM JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (10): : L1696 - L1699
- [10] Investigation of InP epitaxial films on GaAs substrate grown by LP-MOCVD ICO20: MATERIALS AND NANOSTRUCTURES, 2006, 6029