Investigation of the annealing behavior of damage in Si implanted InP by photoacoustic and Raman spectroscopy

被引：0
|
作者：
Kuwahata, Hiroshi [1 ]
Uehara, Fumiya [1 ]
Matsumori, Tokue [1 ]
Muto, Nobuo [1 ]
机构：
[1] Tokai Univ, Kanagawa, Japan
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1997年 / 127-128卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
14
引用
收藏
页码：459 / 462
相关论文
共 50 条
  • [1] Investigation of the annealing behavior of damage in Si implanted InP by photoacoustic and Raman spectroscopy
    Kuwahata, H
    Uehara, F
    Matsumori, T
    Muto, N
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 459 - 462
  • [2] ANNEALING BEHAVIOR OF DAMAGE IN SI-IMPLANTED INP STUDIED BY PIEZOELECTRIC DETECTION OF PHOTOACOUSTIC SIGNAL
    YOSHINAGA, H
    KAWAI, J
    AGUI, T
    UEHARA, F
    MATSUMORI, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 (pt 2): : 591 - 595
  • [3] ANNEALING BEHAVIOR OF SI IMPLANTED INP
    KRAUTLE, H
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4418 - 4421
  • [4] RAMAN-SPECTROSCOPY FOR CHARACTERIZATION OF ANNEALING OF ION-IMPLANTED INP
    MYERS, DR
    GOURLEY, PL
    VAIDYANATHAN, KV
    DUNLAP, HL
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 635 - 640
  • [5] Comparison of annealing behavior in photoacoustic signal intensity of Si+ implanted InP by microphone and piezoelectric transducer methods
    Kuwahata, H
    Muto, N
    Uehara, F
    Matsumori, T
    PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA: TENTH INTERNATIONAL CONFERENCE, 1999, 463 : 250 - 252
  • [6] ANNEALING AND ACTIVATION OF SI IMPLANTED INP
    AKANO, UG
    MITCHELL, IV
    SHEPHERD, FR
    MINER, CJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 996 - 1001
  • [7] Study of Si+-implanted and annealed InP by means of Raman spectroscopy
    Cusco, R.
    Ibanez, J.
    Blanco, N.
    Gonzalez-Diaz, G.
    Artus, L.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1997, 132 (04): : 627 - 632
  • [8] Study of Si+-implanted and annealed InP by means of Raman spectroscopy
    Cusco, R
    Ibanez, J
    Blanco, N
    Gonzalez-Diaz, G
    Artus, L
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 132 (04): : 627 - 632
  • [9] Radiation damage annealing of Hg implanted InP
    Correia, JG
    Marques, JG
    Soares, JC
    Alves, E
    daSilva, MF
    Freitag, K
    Vianden, R
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 120 (1-4): : 244 - 247
  • [10] DAMAGE ANNEALING BEHAVIOR OF 3 MEV SI+-IMPLANTED SILICON
    RAI, AK
    BAKER, J
    INGRAM, DC
    APPLIED PHYSICS LETTERS, 1987, 51 (03) : 172 - 174
12345