Investigation of the annealing behavior of damage in Si implanted InP by photoacoustic and Raman spectroscopy

被引：0
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作者：
Kuwahata, Hiroshi [1 ]
Uehara, Fumiya [1 ]
Matsumori, Tokue [1 ]
Muto, Nobuo [1 ]
机构：
[1] Tokai Univ, Kanagawa, Japan
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1997年 / 127-128卷
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摘要：
14
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页码：459 / 462
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