SELF-INTERSTITIAL MIGRATION IN Si IMPLANTED WITH OXYGEN.

被引：0
|
作者：
Stoemenos, J. [1 ]
Margail, J. [1 ]
Dupuy, M. [1 ]
Jaussaud, C. [1 ]
机构：
[1] CEN, Grenoble, Fr, CEN, Grenoble, Fr
来源：
Physica Scripta | 1987年 / 35卷 / 01期
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摘要：
SEMICONDUCTING SILICON
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页码：42 / 44
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