SELF-INTERSTITIAL MIGRATION IN Si IMPLANTED WITH OXYGEN.

被引:0
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作者
Stoemenos, J. [1 ]
Margail, J. [1 ]
Dupuy, M. [1 ]
Jaussaud, C. [1 ]
机构
[1] CEN, Grenoble, Fr, CEN, Grenoble, Fr
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摘要
SEMICONDUCTING SILICON
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页码:42 / 44
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