High quality In0.15Ga0.85As/AlxGa1-xAs strained multi quantum wells grown by metalorganic vapor phase epitaxy

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[41] INCORPORATION OF CARBON IN HEAVILY DOPED ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
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PEARTON, SJ
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FISCHER, DW
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APPLIED PHYSICS LETTERS, 1990, 57 (03) : 294 - 296
[42] Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1-xAs/GaAs quantum wells with embedded InAs quantum dots
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[43] Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots
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[44] SI DELTA-DOPED IN0.15GA0.85AS/GAAS STRAINED QUANTUM-WELL BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
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HENDRIKS, H
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[45] PREFERENTIAL DESORPTION OF GA FROM ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
KAWABE, M
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[46] DX DEEP CENTERS IN ALXGA1-XAS GROWN BY LIQUID-PHASE EPITAXY
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KUKIMOTO, H
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[47] ALKOXIDE PRECURSORS FOR CONTROLLED OXYGEN INCORPORATION DURING METALORGANIC VAPOR-PHASE EPITAXY GAAS AND ALXGA1-XAS GROWTH
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[48] Interfacial properties of strained piezoelectric InGaAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy on (111)A GaAs
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[49] Confinement and concentration of electrons in Si δ-doped AlxGa1-xAs (x = 0 and 0.35) grown by metalorganic vapour phase epitaxy
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[50] In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B GaAs substrates by molecular beam epitaxy
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