共 50 条
- [21] Broad photoluminescence band in undoped AlxGa1-xAs grown by organometallic vapor phase epitaxyJOURNAL OF APPLIED PHYSICS, 1997, 81 (11) : 7533 - 7539Kakinuma, HAkiyama, M
- [22] HIGH-PURITY GAAS AND ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXYJOURNAL OF CRYSTAL GROWTH, 1990, 102 (04) : 814 - 818FURUHATA, NOKAMOTO, AHOSHINO, H
- [23] Optical properties of MOVPE grown AlxGa1-xAs quantum wellsJOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 621 - 625Roberts, JSDavid, JPRChen, YHSale, TE
- [24] Very high carbon delta-doping concentration in AlxGa1-xAs grown by metalorganic vapor phase epitaxy using trimethylaluminium as a doping precursorJOURNAL OF APPLIED PHYSICS, 1996, 79 (07) : 3554 - 3559Li, GPetravic, MJagadish, C
- [25] Effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1-xAs superlattice structures grown by metalorganic vapor phase epitaxy Redwing, J.M., 1600, Elsevier Science B.V., Amsterdam, Netherlands (145): : 1 - 4
- [26] Type I and Type II Alignment of the Light Hole Band in In0.15Ga0.85As/GaAs and in ln0.15Ga0.85As/Al0.15Ga0.85As Strained Quantum WellsJournal of Electronic Materials, 1997, 26 : 922 - 927E. M. GoldysH. Y. ZuoM. R. PhillipsCM. ContessaM. R. VaughanT. L. Tansley
- [27] Electronic parameters and interfacial properties of GaAs/AlxGa1-xAs multiquantum wells grown on (111)A GaAs by metalorganic vapor phase epitaxy -: art. no. 035308PHYSICAL REVIEW B, 2003, 68 (03)Cho, SHSanz-Hervás, AMajerfeld, AKim, BW
- [28] HIGH-QUALITY ALXGA1-XAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING TRIMETHYLAMINE ALANE AS THE ALUMINUM PRECURSORAPPLIED PHYSICS LETTERS, 1991, 58 (01) : 77 - 79HOBSON, WSHARRIS, TDABERNATHY, CRPEARTON, SJ
- [29] Carbon tetrachloride doped AlxGa1-xAs grown by metalorganic chemical vapor deposition Cunningham, B.T., 1600, (19):
- [30] ORDERING IN STRAINED GAXIN1-XP QUANTUM-WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXYJOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 740 - 745GENG, CMOSER, MWINTERHOFF, RLUX, EHOMMEL, JHOHING, BSCHWEIZER, HSCHOLZ, F
