On a model of a gunn diode with a cathode static domain

A diode with cathode static domain is an n+-n--n-n+ or m-n-n-n+ structure, which possesses the unique feature that for certain voltages across the diode, impact ionization is able to develop in the cathode domain with a high-intensity generation of microwave noise within a broad frequency band. The electric field intensity distribution E(x) in the diodes is found using the two-temperature model of GaAs, which together with the Poisson equation makes it possible to analyze structures with different doping profiles and different contatcts. Evaluations of the models considered are made in terms of the integral characteristics of the structures' breakdown voltages.