INFLUENCE OF ELECTRON DIFFUSION ON THE FORMATION OF A STATIC DOMAIN AT THE ANODE OF A GUNN DIODE.

被引：0
|
作者：
Pozhela, Yu.
Raguotis, R.
Reklaitis, A.
机构：
来源：
| 1978年 / 12卷 / 07期
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中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
Numerical methods are used to study the influence of electron diffusion on the dynamics and trapping of a high-field domain in heavily doped Gunn diode made of n-type GaAs. Calculations are made of the fall in the current as a result of switching and of the voltage dependence of the critical dopant inhomogeneity at which continuous oscillations are observed. The results of the calculations were found to agree with the experimental data if the diffusion component of the current is represented by eD (E)( PARTIAL n/ PARTIAL x).
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页码：806 / 808
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