Si/Si1-xGex heterostructures: electron transport and field-effect transistor operation using Monte Carlo simulation

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J Appl Phys | / 8卷 / 3911期

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[1] Si/Si1-xGex heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation
Dollfus, P
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[2] Monte Carlo simulation of non-local transport effects in strained Si on relaxed Si1-xGex heterostructures
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[3] MONTE-CARLO SIMULATION OF HOLE TRANSPORT IN STRAINED SI1-XGEX
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[5] ELECTRON-TRANSPORT PROPERTIES OF A STRAINED SI LAYER ON A RELAXED SI1-XGEX SUBSTRATE BY MONTE-CARLO SIMULATION
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[8] Si/Si1-xGex and Si/Si1-yCy heterostructures: Materials for high-speed field-effect transistors
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[9] Anomalous electrical properties of Si/Si1-xGex heterostructures with an electron transport channel in Si layers
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[10] STEBIC of Si/Si1-xGex/Si heterostructures
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