Si/Si1-xGex heterostructures: electron transport and field-effect transistor operation using Monte Carlo simulation

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 8卷 / 3911期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] ELECTRON-TRANSPORT IN STRAINED SI LAYERS ON SI1-XGEX SUBSTRATES
    VOGELSANG, T
    HOFMANN, KR
    APPLIED PHYSICS LETTERS, 1993, 63 (02) : 186 - 188
  • [42] Influence of doping on thermal stability of Si/Si1-xGex/Si heterostructures
    Suvar, E
    Christensen, J
    Kuznetsov, A
    Radamson, HH
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 102 (1-3): : 53 - 57
  • [43] Quantification of germanium and boron in heterostructures Si/Si1-xGex/Si by SIMS
    Prudon, G
    Gautier, B
    Dupuy, JC
    Dubois, C
    Bonneau, M
    Delmas, K
    Vallard, JP
    Bremond, G
    Brenier, R
    THIN SOLID FILMS, 1997, 294 (1-2) : 54 - 58
  • [44] HOLE TRANSPORT-PROPERTIES OF SI/SI1-XGEX MODULATION-DOPED HETEROSTRUCTURES
    JIANG, RL
    LIU, JL
    ZHENG, YD
    LI, HF
    ZHENG, HZ
    SUPERLATTICES AND MICROSTRUCTURES, 1994, 16 (04) : 375 - 377
  • [45] OPTICAL WAVE-GUIDING IN SI/SI1-XGEX/SI HETEROSTRUCTURES
    NAMAVAR, F
    SOREF, RA
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) : 3370 - 3372
  • [46] Features of electronic transport in relaxed Si/Si1-xGex heterostructures with high doping level
    Orlov, L. K.
    Nikova, A. A. Mel'
    Orlov, M. L.
    Alyabina, N. A.
    Ivina, N. L.
    Neverov, V. N.
    Horvath, Zs J.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2013, 51 : 87 - 93
  • [47] ANALYTICAL ELECTRON-MICROSCOPY OF SI1-XGEX/SI HETEROSTRUCTURES AND LOCAL ISOLATION STRUCTURES
    ARMIGLIATO, A
    BALBONI, R
    CORTICELLI, F
    FRABBONI, S
    MALVEZZI, F
    MATERIALS SCIENCE AND TECHNOLOGY, 1995, 11 (04) : 400 - 406
  • [48] ELECTRON AND ION-BEAM ANALYSIS OF COMPOSITION AND STRAIN IN SI1-XGEX SI HETEROSTRUCTURES
    ARMIGLIATO, A
    GOVONI, D
    BALBONI, R
    FRABBONI, S
    BERTI, M
    ROMANATO, F
    DRIGO, AV
    MIKROCHIMICA ACTA, 1994, 114 : 175 - 185
  • [49] Effect of injection of Si self-interstitials on Sb diffusion in Si/Si1-xGex/Si heterostructures
    Kuznetsov, AY
    Grahn, J
    Cardenas, J
    Svensson, BG
    Hansen, JL
    Larsen, AN
    PHYSICAL REVIEW B, 1998, 58 (20): : 13355 - 13358
  • [50] High electron mobility in strained Si channel of Si1-xGex/Si/Si1-xGex heterostructure with abrupt interface
    Sugii, N
    Nakagawa, K
    Kimura, Y
    Yamaguchi, S
    Miyao, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (8A) : A140 - A142
12345