FORMATION OF DEFECTS AS A RESULT OF ELECTRON IRRADIATION OFTIN-DOPED P-TYPE SILICON.

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作者：
NEIMASH, V.B.
SOSNIN, M.G.
TUROVSKII, B.M.
SHAKHOVTSOV, V.I.
SHINDICH, V.L.
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| 1982年 / V 16卷 / N 5期
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摘要：
THE ACCUMULATION OF A CENTERS AND DIVACANCIES IN THE COURSEOF ELECTRON IRRADIATION OF P-TYPE SILICON DOPED WITH ISOELECTRONIC TIN IMPURITIES HAS BEEN INVESTIGATED. THE DOPING TOOK PLACE DURING GROWTH FROM A CRUCIBLE BY THE ADDITION OF TINTO THE MELT. CRYSTALS OF P-TYPE SILICON UNDOPED WITH TIN WERE GROWN FROM THE SAME RAW MATERIALS AND IN THE SAME CRUCIBLES AS THOSE DOPED WITH TIN. THE TIN CONCENTRATION WAS DETERMINED BY ACTIVATION ANALYSIS, WHEREAS THE CONCENTRATIONS OF OXYGEN AND CARBON WERE DEDUCED FROM THE INFRARED ABSORPTION BANDS WITH MAXIMA AT 1110 AND 607 CM** - **1.
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