FORMATION OF DEFECTS AS A RESULT OF ELECTRON IRRADIATION OFTIN-DOPED P-TYPE SILICON.

被引：0
|
作者：
NEIMASH, V.B.
SOSNIN, M.G.
TUROVSKII, B.M.
SHAKHOVTSOV, V.I.
SHINDICH, V.L.
机构：
来源：
| 1982年 / V 16卷 / N 5期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
THE ACCUMULATION OF A CENTERS AND DIVACANCIES IN THE COURSEOF ELECTRON IRRADIATION OF P-TYPE SILICON DOPED WITH ISOELECTRONIC TIN IMPURITIES HAS BEEN INVESTIGATED. THE DOPING TOOK PLACE DURING GROWTH FROM A CRUCIBLE BY THE ADDITION OF TINTO THE MELT. CRYSTALS OF P-TYPE SILICON UNDOPED WITH TIN WERE GROWN FROM THE SAME RAW MATERIALS AND IN THE SAME CRUCIBLES AS THOSE DOPED WITH TIN. THE TIN CONCENTRATION WAS DETERMINED BY ACTIVATION ANALYSIS, WHEREAS THE CONCENTRATIONS OF OXYGEN AND CARBON WERE DEDUCED FROM THE INFRARED ABSORPTION BANDS WITH MAXIMA AT 1110 AND 607 CM** - **1.
引用
收藏
页码：577 / 579
相关论文
共 50 条
  • [31] ELECTRON-IRRADIATION AND ANNEALING OF GOLD-DOPED P-TYPE GERMANIUM
    BOYARKINA, NI
    SMIRNOV, LS
    STAS, VF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 249 - 250
  • [32] Irradiation and Annealing of p-type silicon carbide
    Lebedev, Alexander A.
    Bogdanova, Elena V.
    Grigor'eva, Maria V.
    Lebedev, Sergey P.
    Kozlovski, Vitaly V.
    INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013, 2014, 1583 : 156 - 160
  • [33] Macropore Formation on p-Type Silicon
    E.A. Ponomarev
    C. Lévy-Clément
    Journal of Porous Materials, 2000, 7 : 51 - 56
  • [34] Formation and origin of the dominating electron trap in irradiated p-type silicon
    Vines, Lasse
    Monakhov, E. V.
    Kuznetsov, A. Yu.
    Kozlowski, R.
    Kaminski, P.
    Svensson, B. G.
    PHYSICAL REVIEW B, 2008, 78 (08):
  • [35] Macropore formation on p-type silicon
    Ponomarev, EA
    Lévy-Clément, C
    JOURNAL OF POROUS MATERIALS, 2000, 7 (1-3) : 51 - 56
  • [36] DEPENDENCE OF THE CONCENTRATION OF RADIATION DEFECTS IN P-TYPE SILICON ON THE RATE OF IRRADIATION WITH FAST ELECTRONS
    KOLESNIKOV, NV
    LOMASOV, VN
    MALKHANOV, SE
    PILKEVICH, YY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 936 - 937
  • [37] Formation and Removement Mechanism of Haze Defects on（111）p－type Silicon Wafers
    徐岳生
    李养贤
    刘彩池
    鞠玉林
    唐建
    朱则韶
    RARE METALS, 1994, (01) : 31 - 36
  • [38] Formation and remove mechanism of haze defects on (111) p-type silicon wafers
    Xu, Yuesheng
    Li, Yangxian
    Liu, Caichi
    Ju, Yulin
    Tang, Jian
    Zhu, Zeshao
    Rare Metals, 1994, 13 (01) : 31 - 36
  • [39] Electrically active defects in p-type silicon after alpha-particle irradiation
    Danga, Helga T.
    Auret, F. Danie
    Tunhuma, Shandirai M.
    Omotoso, Ezekiel
    Igumbor, Emmanuel
    Meyer, Walter E.
    PHYSICA B-CONDENSED MATTER, 2018, 535 : 99 - 101
  • [40] Low temperature anneal of electron irradiation induced defects in p type silicon
    Trauwaert, MA
    Vanhellemont, J
    Maes, HE
    Van Bavel, AM
    Langouche, G
    Clauws, P
    MATERIALS SCIENCE AND TECHNOLOGY, 1998, 14 (12) : 1295 - 1298
12345