Low-temperature heteroepitaxial growth of cubic SiC on Si using hydrocarbon radicals by gas source molecular beam epitaxy

被引：0
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作者：
Hatayama, Tomoaki [1 ]
Tarui, Yoichiro [1 ]
Fuyuki, Takashi [1 ]
Matsunami, Hiroyuki [1 ]
机构：
[1] Kyoto Univ Yoshidahonmachi, Kyoto, Japan
来源：
Journal of Crystal Growth | 1995年 / 150卷 / 1 -4 pt 2期
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页码：934 / 938
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