Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties

被引：0
|
作者：
机构：
[1] Matsunaga, S.
[2] Yoshida, S.
[3] Kawaji, T.
[4] Inada, T.
来源：
Matsunaga, S. | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Effect of annealing on the electrical and optical properties of GaAs/InGaP/n+InGaAs/GaAs epitaxial layers
    Watanabe, K
    Hyuga, F
    Nittono, T
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) : 5614 - 5620
  • [42] The effect of neutron irradiation and annealing temperature on the electrical properties and lattice constant of epitaxial gallium nitride layers
    V. M. Boyko
    S. S. Verevkin
    N. G. Kolin
    A. V. Korulin
    D. I. Merkurisov
    A. Y. Polyakov
    V. A. Chevychelov
    Semiconductors, 2011, 45 : 134 - 140
  • [43] PHYSICAL AND ELECTRICAL INVESTIGATIONS ON SILICON EPITAXIAL LAYERS ON SAPPHIRE SUBSTRATES
    MERCIER, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 666 - +
  • [44] The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers
    Arslan, Engin
    Duygulu, Oezguer
    Kaya, Ali Arslan
    Teke, Ali
    Oezcelik, Sueleyman
    Ozbay, Ekmel
    SUPERLATTICES AND MICROSTRUCTURES, 2009, 46 (06) : 846 - 857
  • [45] Epitaxial δ-MnxGa1-x layers on GaN(0001): Structural, magnetic, and electrical transport properties
    Bedoya-Pinto, A.
    Zube, C.
    Malindretos, J.
    Urban, A.
    Rizzi, A.
    PHYSICAL REVIEW B, 2011, 84 (10)
  • [46] Structural and electrical properties of silicon epitaxial layers grown by LPE and CVD on identical polycrystalline substrates
    Wagner, G
    Wawra, H
    Dorsch, W
    Albrecht, M
    Krome, R
    Strunk, HP
    Riedel, S
    Moller, HJ
    Appel, W
    JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) : 680 - 685
  • [47] Structural and electrical properties of silicon epitaxial layers grown by LPE on highly resistive monocrystalline substrates
    Kopecek, R
    Peter, K
    Hötzel, J
    Bucher, E
    JOURNAL OF CRYSTAL GROWTH, 2000, 208 (1-4) : 289 - 296
  • [48] Structural and electrical properties of silicon epitaxial layers grown by LPE and CVD on identical polycrystalline substrates
    Inst fuer Kristallzuechtung, Berlin, Germany
    J Cryst Growth, 1-4 (680-685):
  • [49] ANNEALING EFFECTS IN SILICON-NITRIDE ENCAPSULANT FILMS
    SZWEDA, R
    PHYSICA B & C, 1985, 129 (1-3): : 435 - 439
  • [50] CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE - ENCAPSULANT LAYERS FOR ANNEALING GALLIUM-ARSENIDE
    INADA, T
    OHKUBO, T
    SAWADA, S
    HARA, T
    NAKAJIMA, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1525 - 1529
12345