Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties

被引：0
|
作者：
机构：
[1] Matsunaga, S.
[2] Yoshida, S.
[3] Kawaji, T.
[4] Inada, T.
来源：
Matsunaga, S. | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Properties of GaN homoepitaxial layers grown on GaN epitaxial wafers
    Dmitriev, V
    Nikolaev, A
    Cherenkov, A
    Tsvetkov, D
    Stepanov, S
    Kuznetsov, N
    Nikitina, I
    Kovarsky, A
    Yagovkina, M
    Davidov, V
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 451 - 456
  • [22] Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs
    Kacha, A. H.
    Akkal, B.
    Benamara, Z.
    Amrani, M.
    Rabhi, A.
    Monier, G.
    Robert-Goumet, C.
    Bideux, L.
    Gruzza, B.
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 83 : 827 - 833
  • [23] Implantation of As in GaN epitaxial layers during molecular-beam epitaxy
    Ber, BY
    Merkulov, AV
    Novikov, SV
    Tretyakov, VV
    Cheng, TS
    Foxon, CT
    Jenkins, LC
    Hooper, SE
    Lacklison, DE
    Orton, JW
    SEMICONDUCTORS, 1996, 30 (03) : 293 - 296
  • [24] ELECTRICAL PROPERTIES OF THIN EPITAXIAL SILICON
    HANES, MH
    SIMPSON, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : C249 - &
  • [25] The effect of the low-temperature annealing on the electrical and structural properties of epitaxial layers - CMT and MMT
    Nesmelova, IM
    Ryzhkov, VN
    Gumarov, GG
    Petukhov, VY
    Andreev, VA
    18th International Conference on Photoelectronics and Night Vision Devices, 2005, 5834 : 269 - 273
  • [26] OPTICAL AND ELECTRICAL-PROPERTIES OF HEAVILY PHOSPHORUS-DOPED EPITAXIAL SILICON LAYERS
    LUBBERTS, G
    BURKEY, BC
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (03) : 760 - 763
  • [27] Epitaxial Growth and Electrical Properties of Thick SmSi2 Layers on (001) Silicon
    Natali, Franck
    Plank, Natalie O. V.
    Ludbrook, Bart M.
    Richter, Jan
    Minnee, Thom
    Ruck, Ben J.
    Trodahl, H. Joe
    Kennedy, John V.
    Hirsch, Lionel
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (02)
  • [28] Ion implantation and annealing conditions for delamination of silicon layers by hydrogen ion implantation
    Hara, T
    Kakizaki, Y
    Kihana, T
    Oshima, S
    Kitamura, T
    Kajiyama, K
    Yoneda, T
    Sekine, K
    Inoue, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (04) : L78 - L81
  • [29] Ion implantation and annealing conditions of delamination of silicon layers by hydrogen ion implantation
    Hosei Univ, Tokyo, Japan
    J Electrochem Soc, 4 (78-81):
  • [30] Properties of the yellow luminescence in undoped GaN epitaxial layers
    Hofmann, DM
    Kovalev, D
    Steude, G
    Meyer, BK
    Hoffmann, A
    Eckey, L
    Heitz, R
    Detchprom, T
    Amano, H
    Akasaki, I
    PHYSICAL REVIEW B, 1995, 52 (23): : 16702 - 16706
12345