Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties

被引:0
|
作者
机构
[1] Matsunaga, S.
[2] Yoshida, S.
[3] Kawaji, T.
[4] Inada, T.
来源
Matsunaga, S. | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties
    Matsunaga, S
    Yoshida, S
    Kawaji, T
    Inada, T
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (05) : 2461 - 2466
  • [2] Damage to epitaxial GaN layers by silicon implantation
    Tan, HH
    Williams, JS
    Zou, J
    Cockayne, DJH
    Pearton, SJ
    Stall, RA
    APPLIED PHYSICS LETTERS, 1996, 69 (16) : 2364 - 2366
  • [3] Ion implantation processing of GaN epitaxial layers
    Tan, HH
    Williams, JS
    Zou, J
    Cockayne, DJH
    Pearton, SJ
    Yuan, C
    PROCEEDINGS OF THE FIRST SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES, 1996, 96 (11): : 142 - 148
  • [4] Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers
    V. F. Agekyan
    L. E. Vorob’ev
    G. A. Melentyev
    H. Nykänen
    A. Yu. Serov
    S. Suihkonen
    N. G. Filosofov
    V. A. Shalygin
    Physics of the Solid State, 2013, 55 : 296 - 300
  • [5] Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers
    Agekyan, V. F.
    Vorob'ev, L. E.
    Melentyev, G. A.
    Nykanen, H.
    Serov, A. Yu.
    Suihkonen, S.
    Filosofov, N. G.
    Shalygin, V. A.
    PHYSICS OF THE SOLID STATE, 2013, 55 (02) : 296 - 300
  • [6] Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substrates
    Govorkov, AV
    Smirnov, NB
    Polyakov, AY
    Markov, AV
    Voss, L
    Pearton, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (02): : 790 - 794
  • [7] Effect of vacuum annealing on the electrical properties of lead sulfide epitaxial layers
    Levchenko, VI
    Postnova, LI
    INORGANIC MATERIALS, 1996, 32 (09) : 934 - 935
  • [8] Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature
    Fernandez, JRL
    Chitta, VA
    Abramof, E
    da Silva, AF
    Leite, JR
    Tabata, A
    As, DJ
    Frey, T
    Schikora, D
    Lischka, K
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5
  • [9] GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical properties
    Grazzi, C
    Castaldini, A
    Cavallini, A
    Schenk, HPD
    Gibart, P
    Strunk, HP
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3): : 193 - 195
  • [10] Influence of an increase in the implantation dose of erbium ions and annealing temperature on photoluminescence in AlGaN/GaN superlattices and GaN epitaxial layers
    Emel'yanov, AM
    Sobolev, NA
    Shek, EI
    Lundin, VV
    Usikov, AS
    Parshin, EO
    SEMICONDUCTORS, 2005, 39 (09) : 1045 - 1047