2.7 kV epitaxial lateral power DMOSFETs in 4H-SiC

被引：0
|
作者：
Spitz, J. [1 ]
Melloch, M.R. [1 ]
Cooper Jr., J.A. [1 ]
Melnychuk, G. [1 ]
Saddow, S.E. [1 ]
机构：
[1] Purdue Univ, West Lafayette, IN, United States
来源：
Annual Device Research Conference Digest | 2000年
关键词：
D O I：
10.1109/drc.2000.877117
中图分类号：
学科分类号：
摘要：
3
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页码：127 / 128
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