INFLUENCE OF ELECTRON-ELECTRON SCATTERING ON THE HALL EFFECT IN n-TYPE Ge AND n-TYPE Si.

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作者：

Pinchuk, I.I.

Tomchuk, P.M.

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| 1600年 / 09期

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摘要：

HALL EFFECT

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[31] ELECTRON-PHONON SCATTERING AND HIGH-FIELD TRANSPORT IN N-TYPE SI
JORGENSEN, MH
PHYSICAL REVIEW B, 1978, 18 (10) : 5657 - 5666
[32] IMPURITY SCATTERING IN N-TYPE GAAS AND IN DEFORMED N-TYPE GE IN QUANTIZING MAGNETIC-FIELDS
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[33] NOISE AND DIFFUSION OF HOT CARRIERS IN N-TYPE GE AND N-TYPE SI IN MAGNETIC-FIELDS
BAREIKIS, V
VIKTORAVICHYUS, V
GALDIKAS, A
MILYUSHITE, R
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[34] INVESTIGATION OF THE ANISOTROPY OF THE ELECTRON DRAG BY PHONONS IN n-TYPE Ge.
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Buda, I.S.
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Sus', V.A.
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[35] ANISOTROPY OF HALL-COEFFICIENT OF N-TYPE SI
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[36] HALL EFFECT AND MOBILITY IN N-TYPE GAAS
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PHYSICA STATUS SOLIDI, 1968, 29 (01): : K35 - &
[37] HALL EFFECT AND MAGNETORESISTANCE IN N-TYPE GERMANIUM
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[38] CALCULATION OF THE ENERGY RELAXATION TIME FROM OSCILLATIONS OF THE TRANSVERSE CONDUCTIVITY IN N-TYPE Ge AND Si.
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Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (05): : 676 - 677
[39] HALL-EFFECT IN N-TYPE GAS
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MURRI, R
RIZZO, A
VASANELLI, L
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[40] HALL EFFECT AND MAGNETORESISTANCE IN N-TYPE INSB
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