INFLUENCE OF ELECTRON-ELECTRON SCATTERING ON THE HALL EFFECT IN n-TYPE Ge AND n-TYPE Si.

被引：0
|
作者：
Pinchuk, I.I.
Tomchuk, P.M.
机构：
来源：
| 1600年 / 09期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
HALL EFFECT
引用
收藏
相关论文
共 50 条
  • [21] N-TYPE HALL EFFECT IN MNO
    DEWIT, HJ
    CREVECOEUR, C
    PHYSICS LETTERS A, 1967, A 25 (05) : 393 - +
  • [22] INVESTIGATION OF ANISOTROPY OF ELECTRON DRAG BY PHONONS IN N-TYPE GE
    BARANSKII, PI
    BUDA, IS
    KOLOMOETS, VV
    SAMOILOVICH, AG
    SUS, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1402 - 1404
  • [23] HALL SCATTERING CONSTANT IN N-TYPE SILICON
    REIMANN, PL
    WALTON, AK
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 48 (01): : 161 - &
  • [24] QUANTUM TRANSPORT THEORY OF IMPURITY-SCATTERING-LIMITED MOBILITY IN N-TYPE SEMICONDUCTORS INCLUDING ELECTRON-ELECTRON SCATTERING
    LUONG, M
    SHAW, AW
    PHYSICAL REVIEW B, 1971, 4 (08): : 2436 - &
  • [25] GROWTH OF N-TYPE GE ON SI BY MBE
    WANG, PD
    SELVIN, E
    ROBINSON, GY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 209 - 210
  • [26] Spin decoherence in n-type GaAs: The effectiveness of the third-body rejection method for electron-electron scattering
    Marchetti, Gionni
    Hodgson, Matthew
    D'Amico, Irene
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (16)
  • [27] ISOTHERMAL ANNEALING OF ELECTRON-IRRADIATED N-TYPE SI
    DEANGELI.HM
    CARNES, CP
    DREVINSK.PJ
    PENCZER, RE
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (04): : 710 - &
  • [28] ELECTRON-SCATTERING MECHANISMS IN N-TYPE INDIUM SELENIDE
    SEGURA, A
    POMER, F
    CANTARERO, A
    KRAUSE, W
    CHEVY, A
    PHYSICAL REVIEW B, 1984, 29 (10): : 5708 - 5717
  • [29] Effect of n-Type Doping on the Electron Transport of Polyfluorene
    Pandey, C. K.
    Bajpai, Manisha
    Srivastava, Ritu
    Malik, Rakhee
    Shukla, Gyanendra Prakash
    Katiyar, A. K.
    Narayan, B.
    Dhar, Ravindra
    NATIONAL CONFERENCE ON ADVANCED MATERIALS AND DEVICES FOR FUTURISTIC APPLICATIONS, 2018, 2050
  • [30] ELECTRON IRRADIATION DAMAGE IN N-TYPE SI AS A FUNCTION OF DOSE
    PENCZER, RD
    DEANGELI.HM
    CARNES, CP
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03): : 380 - +
12345