INFLUENCE OF ELECTRON-ELECTRON SCATTERING ON THE HALL EFFECT IN n-TYPE Ge AND n-TYPE Si.

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作者：

Pinchuk, I.I.

Tomchuk, P.M.

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| 1600年 / 09期

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摘要：

HALL EFFECT

引用

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[1] INFLUENCE OF ELECTRON-ELECTRON SCATTERING ON HALL-EFFECT IN N-TYPE GE AND N-TYPE SI
PINCHUK, II
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[2] EFFECT OF ELECTRON-ELECTRON COLLISIONS ON MOBILITY OF WARM ELECTRONS IN N-TYPE GE AND N-TYPE SI AT 78 DEGREES K
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (10): : 1239 - +
[3] TRANSPORT THEORY OF THE ACOUSTOELECTRIC EFFECT IN SEMICONDUCTORS SUCH AS n-TYPE Ge AND n-TYPE Si.
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[J]. 1972, 5 (10): : 1645 - 1650
[4] INFLUENCE OF ELECTRON-ELECTRON INTERACTION ON APPEARANCE OF A NEGATIVE TRANSVERSE CONDUCTIVITY IN N-TYPE GE
GRIGOREV, NN
DYKMAN, IM
TOMCHUK, PM
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 706 - 710
[5] INFLUENCE OF ELECTRON-ELECTRON INTERACTION ON ENERGY RELAXATION-TIME OF N-TYPE SI
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[6] ANISOTROPY OF ELECTRON-SCATTERING IN N-TYPE SI
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 826 - +
[7] TRANSPORT PROPERTIES OF NONDEGENERATE N-TYPE SEMICONDUCTORS CONSIDERING ELECTRON-ELECTRON SCATTERING
SODHA, MS
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[J]. PHYSICAL REVIEW, 1959, 114 (03): : 717 - 718
[8] ACOUSTOELECTRIC EFFECT IN N-TYPE GE AND SI
ISKRA, VD
[J]. SOVIET PHYSICS-SOLID STATE, 1964, 5 (09): : 1946 - 1953
[9] PHONON-ELECTRON SCATTERING IN N-TYPE GE AT LOW TEMPERATURES
GAUR, NKS
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[J]. PHYSICAL REVIEW, 1967, 159 (03): : 610 - &
[10] HALL-EFFECT IN COMPENSATED N-TYPE GE
BARANSKII, PI
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SEITOV, EP
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (05): : 696 - 697

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