An analysis of the anomalous dip in scattering parameter S11 of InGaP/GaAs heterojunction bipolar transistors (HBTs)

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作者：
Lin, Yo-Sheng [1 ]
Lu, Shey-Shi [2 ]
机构：
[1] Department of Electrical Engineering, National Chi-Nan University, Puli, Taiwan
[2] Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2004年 / 43卷 / 6 B期
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