Simple model for gate-voltage dependent parasitic resistance in short channel lightly doped drain metal oxide semiconductor field effect transistors

被引：0

作者：

Lee, Jung-Il ^{[1
]}

Lee, Myung-Bok ^{[1
]}

Lee, Sang Young ^{[1
]}

Kang, Kwang Nham ^{[1
]}

Yoon, Kyung Sik ^{[1
]}

机构：

[1] Korea Inst of Science and Technology, Seoul, Korea, Republic of

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 04期

关键词：

Gate Voltage - Lightly Doped Drain Structure - Parasitic Resistance - Velocity Saturation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：535 / 537

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