Room-temperature lasing operation of GaInNAs-GaAs single-quantum-well laser diodes

被引：0
|
作者：
Hitachi, Ltd, Tokyo, Japan [1 ]
机构：
来源：
IEEE J Sel Top Quantum Electron | / 2卷 / 206-209期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Improved characteristic temperature (T0) of a 1.3-μm GaInNAs/GaAs single-quantum-well laser diode through thermal annealing
    Kitatani, T
    Kondow, M
    Nakahara, K
    Uomi, K
    Tanaka, T
    THIN FILMS FOR OPTICAL WAVEGUIDE DEVICES AND MATERIALS FOR OPTICAL LIMITING, 2000, 597 : 33 - 38
  • [42] Room-temperature operation of an InAs-GaAs-AlAs quantum-cascade laser
    Carder, DA
    Wilson, LR
    Green, RP
    Cockburn, JW
    Hopkinson, M
    Steer, MJ
    Airey, R
    Hill, G
    APPLIED PHYSICS LETTERS, 2003, 82 (20) : 3409 - 3411
  • [43] Room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes grown by metalorganic chemical vapor deposition
    Sato, SI
    Osawa, Y
    Saitoh, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2671 - 2675
  • [44] ROOM-TEMPERATURE PULSED OPERATION OF BLUE LASER-DIODES
    OKUYAMA, H
    ITOH, S
    KATO, E
    OZAWA, M
    NAKAYAMA, N
    NAKANO, K
    IKEDA, M
    ISHIBASHI, A
    MORI, Y
    ELECTRONICS LETTERS, 1994, 30 (05) : 415 - 416
  • [45] Room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes grown by metallorganic chemical vapor deposition
    Ricoh Co, Ltd, Miyagi, Japan
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (5 A): : 2671 - 2675
  • [46] 540-nm Green Room-Temperature CW Operation of BeZnCdSe Single Quantum Well Laser Diode
    Fujisaki, S.
    Nakajima, H.
    Kasai, J.
    Akimoto, R.
    Tasai, K.
    Takiguchi, Y.
    Kikawa, T.
    Asatsuma, T.
    Tamamura, K.
    Tanaka, S.
    Tsuji, S.
    Kuwatsuka, H.
    Hasama, T.
    Ishikawa, H.
    22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2010, : 19 - +
  • [47] Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode
    Nakamura, F
    Kobayashi, T
    Tojo, T
    Asatsuma, T
    Naganuma, K
    Kawai, H
    Ikeda, M
    ELECTRONICS LETTERS, 1998, 34 (11) : 1105 - 1107
  • [48] Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure
    Kneissl, M
    Bour, DP
    Van de Walle, CG
    Romano, LT
    Northrup, JE
    Wood, RM
    Teepe, M
    Johnson, NM
    APPLIED PHYSICS LETTERS, 1999, 75 (04) : 581 - 583
  • [49] High-Power Continuous-Wave Operation of BeZnCdSe Single-Quantum-Well Green Laser Diodes
    Fujisaki, Sumiko
    Kasai, Jun-ichi
    Akimoto, Ryouichi
    Tanaka, Shigehisa
    Tsuji, Shinji
    Hasama, Toshifumi
    Ishikawa, Hiroshi
    APPLIED PHYSICS EXPRESS, 2012, 5 (06)
  • [50] Simulation of double quantum well GaInNAs laser diodes
    Lim, J. J.
    MacKenzie, R.
    Sujecki, S.
    Sadeghi, M.
    Wang, S. M.
    Wei, Y. Q.
    Gustavsson, J. S.
    Larsson, A.
    Melanen, P.
    Sipilae, P.
    Uusimaa, P.
    George, A. A.
    Smowton, P. M.
    Larkins, E. C.
    IET OPTOELECTRONICS, 2007, 1 (06) : 259 - 265
12345