540-nm Green Room-Temperature CW Operation of BeZnCdSe Single Quantum Well Laser Diode

被引：0
|
作者：
Fujisaki, S. [1 ]
Nakajima, H. [2 ]
Kasai, J. [3 ]
Akimoto, R. [3 ]
Tasai, K. [2 ]
Takiguchi, Y. [2 ]
Kikawa, T. [1 ]
Asatsuma, T. [2 ]
Tamamura, K. [2 ]
Tanaka, S. [1 ]
Tsuji, S. [1 ]
Kuwatsuka, H. [3 ]
Hasama, T. [3 ]
Ishikawa, H. [3 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, 1-280 Higashi Koigakubo, Tokyo 1858601, Japan
[2] Sony Corp, Kanagawa 2430014, Japan
[3] Natl Inst Adv Ind Sci & Technol, Tsukuba 305, Japan
来源：
22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2010年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Room temperature continuous-wave operation at 540 nm was demonstrated with a BeZnCdSe quantum-well laser-diode. Threshold current density of the narrow stripe, 800 mu m cavity laser was as low as similar to 1.7 kA/cm(2)
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页码：19 / +
页数：2
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