540-nm Green Room-Temperature CW Operation of BeZnCdSe Single Quantum Well Laser Diode

被引：0

作者：

Fujisaki, S. ^{[1
]}

Nakajima, H. ^{[2
]}

Kasai, J. ^{[3
]}

Akimoto, R. ^{[3
]}

Tasai, K. ^{[2
]}

Takiguchi, Y. ^{[2
]}

Kikawa, T. ^{[1
]}

Asatsuma, T. ^{[2
]}

Tamamura, K. ^{[2
]}

Tanaka, S. ^{[1
]}

Tsuji, S. ^{[1
]}

Kuwatsuka, H. ^{[3
]}

Hasama, T. ^{[3
]}

Ishikawa, H. ^{[3
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, 1-280 Higashi Koigakubo, Tokyo 1858601, Japan

[2] Sony Corp, Kanagawa 2430014, Japan

[3] Natl Inst Adv Ind Sci & Technol, Tsukuba 305, Japan

来源：

22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature continuous-wave operation at 540 nm was demonstrated with a BeZnCdSe quantum-well laser-diode. Threshold current density of the narrow stripe, 800 mu m cavity laser was as low as similar to 1.7 kA/cm(2)

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页码：19 / +

页数：2

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