共 50 条
- [1] SILICON-WAFER ORIENTATION DEPENDENCE OF METAL-OXIDE-SEMICONDUCTOR DEVICE RELIABILITY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 500 - 504
- [2] Study of wafer orientation dependence on performance and reliability of CMOS with direct-tunneling gate oxide 2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, : 77 - 78
- [5] Subband gap photoresponse of nanocrystalline silicon in a metal-oxide-semiconductor device Journal of Applied Physics, 2008, 104 (07):
- [9] Time and temperature dependence of the oxide layer on silicon wafer. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 218 : U430 - U430