Subband gap photoresponse of nanocrystalline silicon in a metal-oxide-semiconductor device

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作者：
Hossain, S.M. [1 ,4 ]
Anopchenko, A. [1 ]
Prezioso, S. [1 ]
Ferraioli, L. [1 ]
Pavesi, L. [1 ]
Pucker, G. [2 ]
Bellutti, P. [2 ]
Binetti, S. [3 ]
Acciarri, M. [3 ]
机构：
[1] Laboratorio di Nanoscienze, Dipartimento di Fisica, Università di Trento, Via Sommarive 14, 38100 Povo (Trento), Italy
[2] Microtechnologies Laboratory, Fondazione Bruno Kessler, Via Sommarive 18, 38100 Povo (Trento), Italy
[3] Dipartimento di Scienza Dei Materiali, Università Degli Studi Milano-Bicocca, Via Cozzi 53, 20125 Milano, Italy
[4] Department of Physics, Bengal Engineering and Science University, Sibpur, India
来源：
Journal of Applied Physics | 2008年 / 104卷 / 07期
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