HOLE TRANSPORT IN BORON-COMPENSATED a-Si:H FILMS.

被引：0
|
作者：
Shirafuji, Junji [1 ]
Shirakawa, Kazuhiro [1 ]
机构：
[1] Osaka Univ, Suita, Jpn, Osaka Univ, Suita, Jpn
来源：
| 1600年 / 77-78 Dec II期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING SILICON COMPOUNDS
引用
收藏
相关论文
共 50 条
  • [41] The charge transport properties of a-Si:H thin films under hydrostatic pressure
    Hahn, W.
    Boshta, M.
    Baerner, K.
    Braunstein, R.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 130 (1-3): : 184 - 188
  • [42] EFFECTS OF HYDROGEN AND HELIUM DILUTION OF SILANE ON THE OPTICAL AND ELECTRICAL PROPERTIES OF GD DEPOSITED a-Si:H FILMS.
    Ma Honglei
    Cao Baocheng
    Li Shuying
    Lu Darong
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1984, 5 (05): : 516 - 522
  • [43] PHOTOCONDUCTIVITY IN AMORPHOUS Si:H:Cl FILMS.
    Augelli, V.
    Murri, R.
    Alba, N.
    1600, (54):
  • [44] Nano-columnar grain growth structure of boron-compensated silicon thin films by transmission electron microscopy
    Dussan, A.
    Quiroz, Heiddy P.
    Martinez A, J. G.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 100 : 53 - 56
  • [45] Molecular dynamics investigations of boron doping in a-Si:H
    Fedders, PA
    Drabold, DA
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 67 - 72
  • [46] On the diffusion of boron in glow-discharge a-Si:H
    Schoelch, H.P.
    Kalbitzer, S.
    Fink, D.
    Behar, M.
    Materials Science & Engineering B: Solid-State Materials for Advanced Technology, 1988, B1 (01): : 135 - 137
  • [47] PHOTOCONDUCTIVITY OF LIGHTLY BORON DOPED a-Si:H.
    Jousse, D.
    Chaussat, C.
    Vaillant, F.
    Bruyere, J.C.
    Lesimple, F.
    1600, (77-78 Dec II):
  • [48] Visible photoluminescence from porous a-Si:H and porous a-Si:C:H thin films
    Estes, MJ
    Hirsch, LR
    Wichart, S
    Moddel, G
    Williamson, DL
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) : 1832 - 1840
  • [49] High electric field hole mobility in a-Si:H
    Juska, G
    Arlauskas, K
    Equer, B
    Vanderhaghen, R
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 176 - 179
  • [50] High electric field hole mobility in a-Si:H
    Juska, G.
    Arlauskas, K.
    Equer, B.
    Vanderhaghen, R.
    Journal of Non-Crystalline Solids, 227-230 (Pt A): : 176 - 179
12345