PHOTOCONDUCTIVITY OF LIGHTLY BORON DOPED a-Si:H.

被引:0
|
作者
Jousse, D. [1 ]
Chaussat, C. [1 ]
Vaillant, F. [1 ]
Bruyere, J.C. [1 ]
Lesimple, F. [1 ]
机构
[1] CNRS, Grenoble, Fr, CNRS, Grenoble, Fr
来源
| 1600年 / 77-78 Dec II期
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
SEMICONDUCTING SILICON COMPOUNDS
引用
收藏
相关论文
共 50 条
  • [1] CHARACTERISTICS OF THE TEMPERATURE-DEPENDENCE OF THE PHOTOCONDUCTIVITY OF A-SI - H DOPED LIGHTLY WITH BORON
    KAZANSKII, AG
    KLIMASHIN, IV
    KUZNETSOV, SV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (09): : 1016 - 1018
  • [2] PHOTOCONDUCTIVITY OF LIGHTLY BORON DOPED A-SI-H
    JOUSSE, D
    CHAUSSAT, C
    VAILLANT, F
    BRUYERE, JC
    LESIMPLE, F
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 627 - 630
  • [3] Transient photoconductivity and its light-induced change of lightly boron-doped a-Si:H films
    Zhang, SB
    Kong, GL
    Xu, YY
    Wang, YQ
    Diao, HW
    Liao, XB
    ACTA PHYSICA SINICA, 2002, 51 (01) : 111 - 114
  • [4] Transient photoconductivity and its light-induced change of lightly boron-doped a-Si:H films
    Zhang, Shi-Bin
    Kong, Guang-Lin
    Xu, Yan-Yue
    Wang, Yong-Qian
    Diao, Hong-Wei
    Liao, Xian-Bo
    Wuli Xuebao/Acta Physica Sinica, 2002, 51 (01):
  • [5] EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN a-Si:H.
    Jackson, Warren B.
    Thompson, Malcolm J.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt II): : 883 - 885
  • [6] 'IN SITU' MEASUREMENTS OF THE TRANSIENT PHOTOCONDUCTIVITY IN A-Si:H.
    Werner, A.
    Kunst, M.
    Beck, G.
    Lilie, J.
    Tributsch, H.
    1600, (56):
  • [7] Role of surface on the persistent photoconductivity in porous silicon and boron doped a-Si:H
    Agarwal, S. C.
    Kumar, Abhishek
    Mandal, N. P.
    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2006, 2007, 910 : 267 - 271
  • [8] DANGLING-BOND RECOMBINATION AND PHOTOCONDUCTIVITY OF a-Si:H.
    Kurova, I.A.
    Zvyagin, I.P.
    Journal of Non-Crystalline Solids, 1986, 90 (1-3) : 207 - 210
  • [9] Infrared photoconductivity in heavily nitrogen doped a-Si:H
    Shelton, David J.
    Ginn, James. C.
    Coffey, Kevin R.
    Boreman, Glenn D.
    AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153, 2009, 1153
  • [10] KINETIC BEHAVIORS OF THE TIME-DEPENDENCE OF PHOTOCONDUCTIVITY IN a-Si:H.
    Gu, Benyuan
    Han, Daxing
    Li, Chenxi
    1600, (77-78 Dec II):