Study on ohmic contact of Ag/AuGeNi/n-GaSb

被引：0
|
作者：
Zhong, Xingru [1 ]
Liu, Aimin [1 ]
Lin, Lanying [1 ]
Chang, Xiulan [1 ]
Tao, Kun [1 ]
Chen, Shunying [1 ]
机构：
[1] Inst of Semiconductors, Academia Sinica, Beijing, China
来源：
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 1995年 / 16卷 / 04期
关键词：
Evaporation - Gallium alloys - Ohmic contacts;
D O I：
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中图分类号：
学科分类号：
摘要：
Evaporated contact of Ag/AuGeNi was studied for n-GaSb. Alloying treatment was typically performed at 150-450°C for 10 minutes. The best alloying temperature is 220°C, while the contact resistivity is about 6.7×10-4Ω cm2. The interface between metal and semiconductor was studied by Auger electron spectroscopy and X-ray diffraction. The relation between the contact resistivity and microstructure was discussed. AuGeNi/n-GaAs and AuGeNi/n-GaSb were compared briefly.
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页码：384 / 388
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