Study on ohmic contact of Ag/AuGeNi/n-GaSb

被引：0

作者：

Zhong, Xingru ^{[1
]}

Liu, Aimin ^{[1
]}

Lin, Lanying ^{[1
]}

Chang, Xiulan ^{[1
]}

Tao, Kun ^{[1
]}

Chen, Shunying ^{[1
]}

机构：

[1] Inst of Semiconductors, Academia Sinica, Beijing, China

来源：

Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 1995年 / 16卷 / 04期

关键词：

Evaporation - Gallium alloys - Ohmic contacts;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Evaporated contact of Ag/AuGeNi was studied for n-GaSb. Alloying treatment was typically performed at 150-450°C for 10 minutes. The best alloying temperature is 220°C, while the contact resistivity is about 6.7×10-4Ω cm2. The interface between metal and semiconductor was studied by Auger electron spectroscopy and X-ray diffraction. The relation between the contact resistivity and microstructure was discussed. AuGeNi/n-GaAs and AuGeNi/n-GaSb were compared briefly.

引用

页码：384 / 388

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