EXPERIMENTAL DETERMINATION OF DEFECTS AND CHARGE RELAXATION IN HIGH-RESISTIVITY SEMICONDUCTOR LAYERS.

The method of electrostatic induction is used for determining the surface charge on nonhomogeneous high-resistivity semiconductor layers. The experimental data on the relaxation of the surface charge serve as a basis for detection of defects and measurement of the electrical conductivity of a given material. Equipment is described which measures these parameters ensuring a linear resolution of 100 mu with a probe moving over the specimen at a velocity of 10 m/sec.