EXPERIMENTAL DETERMINATION OF DEFECTS AND CHARGE RELAXATION IN HIGH-RESISTIVITY SEMICONDUCTOR LAYERS.

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作者：
Arsent'ev, Yu.A.
Grishchenko, V.L.
Martsinkyavichus, V.A.
Naumenko, L.M.
Pronin, V.P.
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来源：
The Soviet journal of nondestructive testing | 1981年 / 17卷 / 05期
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摘要：
The method of electrostatic induction is used for determining the surface charge on nonhomogeneous high-resistivity semiconductor layers. The experimental data on the relaxation of the surface charge serve as a basis for detection of defects and measurement of the electrical conductivity of a given material. Equipment is described which measures these parameters ensuring a linear resolution of 100 mu with a probe moving over the specimen at a velocity of 10 m/sec.
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页码：390 / 394
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