Charge compensation in irradiated semiconductor devices using high-resistivity field plates

被引：1
|
作者：
Parker, S [1 ]
Kenney, C [1 ]
机构：
[1] Univ Hawaii, Honolulu, HI 96822 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 465卷 / 01期
关键词：
field plates; semiconductor radiation detectors; sensors; oxide trapped charge; charge compensation; radiation damage; polysilicon resistors;
D O I：
10.1016/S0168-9002(01)00363-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A field-plate structure using a high-resistivity material is described. As with other field plates, it can be used to compensate trapped charges in semiconductor devices, including radiation detectors, but because little current flows through it during the time a pulse is present on the signal electrodes, it does not significantly increase the effective capacitance between signal electrodes or other structures near the plates. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码：101 / 107
页数：7
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