Surface particle analysis of SIMOX (Separation by IMplanted OXygen) wafers

被引：0

|

作者：

Nippon Steel Corp, Sagamihara, Japan ^{[1
]}

机构：

来源：

Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 12 A卷 / 5937-5941期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[41] OPTICAL STUDIES OF SIMOX (SEPARATION BY IMPLANTATION OF OXYGEN) LAYERS
STEIGMEIER, EF
HARBEKE, G
HEMMENT, P
REESON, KJ
JASTRZEBSKI, L
HELVETICA PHYSICA ACTA, 1988, 61 (1-2): : 130 - 130
[42] SIMOX WAFERS HAVING LOW DISLOCATION DENSITY FORMED WITH A SUBSTOICHIOMETRIC DOSE OF OXYGEN
NAKASHIMA, S
IZUMI, K
IEICE TRANSACTIONS ON ELECTRONICS, 1992, E75C (12) : 1415 - 1420
[43] Role of buried oxide microstructure in dosimetry of implanted oxygen in SIMOX technology
Anc, MJ
Matthews, B
Dolan, RP
2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, : 265 - 268
[44] Examination of correlation of surface morphologies of top-silicon and buried oxide layers in high-temperature-annealed separation by implanted oxygen wafers
Ishiyama, T
Nagase, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (11): : 6019 - 6020
[45] Examination of correlation of surface morphologies of top-silicon and buried oxide layers in high-temperature-annealed separation by IMplanted OXygen wafers
Ishiyama, Toshihiko
Nagase, Masao
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (11): : 6019 - 6020
[46] Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams
1600, American Institute of Physics Inc. (90):
[47] Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams
Uedono, A
Chen, ZQ
Ogura, A
Ono, H
Suzuki, R
Ohdaira, T
Mikado, T
JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) : 6026 - 6031
[48] Current-path observation in low-dose SIMOX (Separation by Implanted Oxygen) buried-SiO2 layer
Kajiyama, Kenji, 1600, JJAP, Minato-ku, Japan (34):
[49] Evaluation of defects in surface Si near Si/BOX interface in SIMOX wafers
Sudou, M
Kainuma, M
Nakai, T
Tomizawa, K
PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1997, 97 (23): : 119 - 124
[50] Spectroscopic ellipsometry of SIMOX (Separation by implanted oxygen): Thickness distribution of buried oxide and optical properties of top-Si layer
Jayatissa, AH
Yamaguchi, T
Nasu, M
Aoyama, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2581 - 2586

← 1 2 3 4 5 →