共 50 条
- [1] Surface particle analysis of SIMOX (Separation by IMplanted OXygen) wafers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12A): : 5937 - 5941
- [2] Analysis of interface microstructure evolution in Separation by IMplanted OXygen (SIMOX) wafers 1600, JJAP, Tokyo, Japan (39):
- [3] Analysis of interface microstructure evolution in separation by IMplanted OXygen (SIMOX) wafers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B): : 4653 - 4656
- [4] Optical thickness evaluation of separation by IMplanted OXygen (SIMOX) wafers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2A): : 526 - 532
- [5] Optical thickness evaluation of separation by IMplanted OXygen (SIMOX) wafers Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 A): : 526 - 532
- [7] Quality improvement in SIMOX (Separation by Implanted Oxygen) wafer technology Nippon Steel Technical Report, 2001, (83): : 79 - 84
- [8] Redistribution process of oxygen atoms in separation-by-implanted-oxygen (SIMOX) substrates JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (02): : 471 - 478
- [10] Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen) Appl Surf Sci, 1-4 (259-264):