共 50 条
- [1] Optical thickness evaluation of separation by IMplanted OXygen (SIMOX) wafers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2A): : 526 - 532
- [2] Surface particle analysis of SIMOX (Separation by IMplanted OXygen) wafers Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 A (5937-5941):
- [3] Surface particle analysis of SIMOX (Separation by IMplanted OXygen) wafers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12A): : 5937 - 5941
- [4] Analysis of interface microstructure evolution in Separation by IMplanted OXygen (SIMOX) wafers 1600, JJAP, Tokyo, Japan (39):
- [5] Analysis of interface microstructure evolution in separation by IMplanted OXygen (SIMOX) wafers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B): : 4653 - 4656
- [7] Spectroscopic ellipsometry of SIMOX (Separation by implanted oxygen): Thickness distribution of buried oxide and optical properties of top-Si layer JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2581 - 2586
- [8] Quality improvement in SIMOX (Separation by Implanted Oxygen) wafer technology Nippon Steel Technical Report, 2001, (83): : 79 - 84
- [9] Redistribution process of oxygen atoms in separation-by-implanted-oxygen (SIMOX) substrates JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (02): : 471 - 478