MILLIMETER-WAVE GaAs FET's PREPARED BY MBE.

被引：0

作者：

Kim, B. ^{[1
]}

Tserng, H.Q. ^{[1
]}

Shih, H.D. ^{[1
]}

机构：

[1] Texas Instruments Inc, Central, Research Lab, Dallas, TX, USA, Texas Instruments Inc, Central Research Lab, Dallas, TX, USA

来源：

Electron device letters | 1985年 / EDL-6卷 / 01期

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