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- [36] CONTROL OF SULFUR DOPING FOR GAAS VPE LAYERS FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1981, 17 (02): : 57 - 70
- [37] GAAS ATOMIC LAYER EPITAXY BY HYDRIDE VPE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03): : L212 - L214
- [40] Growth of high quality cubic GaN on (001) GaAs by Halide VPE with back side buffer OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 : 20 - 26