THERMODYNAMICS OF GaAs GROWTH BY MOC-VPE.

被引：0
|
作者：
Yoshida, Masaji [1 ]
Watanabe, Hisatsune [1 ]
机构：
[1] NEC, Fundamental Research Lab,, Kawasaki, Jpn, NEC, Fundamental Research Lab, Kawasaki, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1985年 / 24卷 / 09期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
14
引用
收藏
页码：1236 / 1237
相关论文
共 50 条
  • [1] THERMODYNAMICS OF GAAS GROWTH BY MOC-VPE
    YOSHIDA, M
    WATANABE, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (09): : 1236 - 1237
  • [2] Hydride VPE Growth of GaAs for FET's
    Stringfellow, G. B.
    Hom, G.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1806 - 1811
  • [3] GROWTH OF GAAS VPE LAYERS WITH HIGH THICKNESS UNIFORMITY
    NOGAMI, M
    KOMENO, J
    SHIBATOMI, A
    OHKAWA, S
    JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) : 637 - 639
  • [4] GROWTH OF A GAAS VPE LAYER WITH AN ABRUPT DOPING PROFILE
    KOMENO, J
    OHKAWA, S
    APPLIED PHYSICS LETTERS, 1979, 35 (09) : 693 - 695
  • [5] EFFECT OF OXYGEN INJECTION DURING VPE GROWTH OF GAAS FILMS
    PALM, L
    BRUCH, H
    BACHEM, KH
    BALK, P
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 555 - 570
  • [6] VPE growth of GaAs by the pulsed introduction of H2
    Koukitu, Akinori
    Ihana, Tsuneaki
    Hashimoto, Sakae
    Suzuki, Takeyuki
    Seki, Hisashi
    Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 pt 2 (06):
  • [7] THE VPE GROWTH OF GAAS BY THE PULSED INTRODUCTION OF H-2
    KOUKITU, A
    IHANA, T
    HASHIMOTO, S
    SUZUKI, T
    SEKI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (06): : L957 - L959
  • [8] ROLE OF SILICON DURING GROWTH OF VPE GAAS-LAYERS
    KUPPER, P
    BRUCH, H
    HEYEN, M
    BALK, P
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (05) : 455 - 472
  • [9] GROWTH MECHANISMS IN GAAS-VPE AT LOW DEPOSITION TEMPERATURE
    SCHWETLICK, S
    SEIFERT, W
    BUTTER, E
    CRYSTAL RESEARCH AND TECHNOLOGY, 1985, 20 (04) : 431 - 437
  • [10] OM-VPE GROWTH OF MG-DOPED GAAS
    LEWIS, CR
    DIETZE, WT
    LUDOWISE, MJ
    ELECTRONICS LETTERS, 1982, 18 (13) : 569 - 570
12345