VPE growth of GaAs by the pulsed introduction of H2

被引:0
|
作者
Koukitu, Akinori [1 ]
Ihana, Tsuneaki [1 ]
Hashimoto, Sakae [1 ]
Suzuki, Takeyuki [1 ]
Seki, Hisashi [1 ]
机构
[1] Tokyo Univ of Agriculture &, Technology, Japan
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] THE VPE GROWTH OF GAAS BY THE PULSED INTRODUCTION OF H-2
    KOUKITU, A
    IHANA, T
    HASHIMOTO, S
    SUZUKI, T
    SEKI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (06): : L957 - L959
  • [2] NOVEL GA/ASCL3/H2 REACTOR FOR CONTROLLING STOICHIOMETRY IN THE GROWTH OF VAPOR-PHASE EPITAXY (VPE) GAAS
    COLTER, PC
    LITTON, CW
    REYNOLDS, DC
    LOOK, DC
    YU, PW
    LI, SS
    WANG, WL
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 28 - 35
  • [3] VAPOR-PHASE EPITAXY OF GAAS BY THE PULSED INTRODUCTION OF H-2
    KOUKITU, A
    SUZUKI, T
    SEKI, H
    JOURNAL OF CRYSTAL GROWTH, 1985, 71 (02) : 450 - 452
  • [4] Hydride VPE Growth of GaAs for FET's
    Stringfellow, G. B.
    Hom, G.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1806 - 1811
  • [5] THERMODYNAMICS OF GAAS GROWTH BY MOC-VPE
    YOSHIDA, M
    WATANABE, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (09): : 1236 - 1237
  • [6] THERMODYNAMICS OF GaAs GROWTH BY MOC-VPE.
    Yoshida, Masaji
    Watanabe, Hisatsune
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1985, 24 (09): : 1236 - 1237
  • [7] GROWTH OF GAAS VPE LAYERS WITH HIGH THICKNESS UNIFORMITY
    NOGAMI, M
    KOMENO, J
    SHIBATOMI, A
    OHKAWA, S
    JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) : 637 - 639
  • [8] GROWTH OF A GAAS VPE LAYER WITH AN ABRUPT DOPING PROFILE
    KOMENO, J
    OHKAWA, S
    APPLIED PHYSICS LETTERS, 1979, 35 (09) : 693 - 695
  • [9] THERMODYNAMIC STUDY OF GROWTH RATE OF EPITAXIAL GAAS BY GAAS/ASCL3/H2 SYSTEM
    SEKI, H
    MORIYAMA.K
    MATUMOTO, S
    URAMOTO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (06) : 785 - &
  • [10] EFFECT OF OXYGEN INJECTION DURING VPE GROWTH OF GAAS FILMS
    PALM, L
    BRUCH, H
    BACHEM, KH
    BALK, P
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 555 - 570