共 50 条
- [1] THE VPE GROWTH OF GAAS BY THE PULSED INTRODUCTION OF H-2 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (06): : L957 - L959
- [2] NOVEL GA/ASCL3/H2 REACTOR FOR CONTROLLING STOICHIOMETRY IN THE GROWTH OF VAPOR-PHASE EPITAXY (VPE) GAAS PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 28 - 35
- [5] THERMODYNAMICS OF GAAS GROWTH BY MOC-VPE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (09): : 1236 - 1237
- [6] THERMODYNAMICS OF GaAs GROWTH BY MOC-VPE. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1985, 24 (09): : 1236 - 1237