VPE growth of GaAs by the pulsed introduction of H2

被引：0
|
作者：
Koukitu, Akinori [1 ]
Ihana, Tsuneaki [1 ]
Hashimoto, Sakae [1 ]
Suzuki, Takeyuki [1 ]
Seki, Hisashi [1 ]
机构：
[1] Tokyo Univ of Agriculture &, Technology, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1988年 / 27 pt 2卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] GAP AND GAAS FILM GROWTH ON SI SUBSTRATES BY A NEW HYDRIDE VPE
    MORI, H
    OGASAWARA, M
    TACHIKAWA, M
    YAMAMOTO, M
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A27 - A27
  • [22] THE GROWTH OF MAGNESIUM-DOPED GAAS BY THE OM-VPE PROCESS
    LEWIS, CR
    DIETZE, WT
    LUDOWISE, MJ
    JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) : 507 - 524
  • [23] INFLUENCE OF GROWTH-CONDITIONS ON INCORPORATION OF DEEP LEVELS IN VPE GAAS
    HUMBERT, A
    HOLLAN, L
    BOIS, D
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4137 - 4144
  • [24] Growth of thick and pure cubic GaN on (001) GaAs by halide VPE
    Tsuchiya, Harutoshi
    Sunaba, Kenji
    Suemasu, Takashi
    Hasegawa, Fumio
    Journal of Crystal Growth, 1999, 198-199 (pt 2): : 1056 - 1060
  • [25] AN EFFICIENTLY INITIATED PULSED H2 + F2 LASER
    KERBER, RL
    CHING, A
    LUNDQUIST, ML
    WHITTIER, JS
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (06) : 607 - 609
  • [26] Improvement of energetic efficiency for homoepitaxial diamond growth in a H2/CH4 pulsed discharge
    Brinza, O.
    Achard, J.
    Silva, F.
    Duten, X.
    Michau, A.
    Hassouni, K.
    Gicquel, A.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (09): : 2847 - 2853
  • [27] VAPOR GROWTH OF GAAS BY H-2 INTRODUCTION INTO AN INERT CARRIER GAS-STREAM
    KOUKITU, A
    SEKI, H
    FUJIMOTO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (08) : 1591 - 1592
  • [28] The H2 molecule in semiconductors:: An angel in GaAs, a devil in Si
    Estreicher, SK
    ACTA PHYSICA POLONICA A, 2002, 102 (4-5) : 513 - 528
  • [29] The strange behavior of interstitial H2 molecules Si and GaAs
    Estreicher, SK
    McAfee, JL
    Fedders, PA
    Pruneda, JM
    Ordejón, P
    PHYSICA B-CONDENSED MATTER, 2001, 308 : 202 - 205
  • [30] Effect of high density H2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs
    Ren, F
    Kopf, RF
    Kuo, JM
    Lothian, JR
    Lee, JW
    Pearton, SJ
    Shul, RJ
    Constantine, C
    Johnson, D
    SOLID-STATE ELECTRONICS, 1998, 42 (05) : 749 - 753
12345