LIMITATION OF SHORT-CHANNEL-LENGTH N + -POLYSILICON-GATE CMOS ICs.

被引：0

作者：

Hsu, S.T. ^{[1
]}

机构：

[1] RCA Lab, Princeton, NJ, USA, RCA Lab, Princeton, NJ, USA

来源：

R.C.A. Review | 1985年 / 46卷 / 02期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

INTEGRATED CIRCUITS, VLSI

引用

页码：153 / 162

共 50 条

[1] THE LIMITATION OF SHORT-CHANNEL-LENGTH N-+-POLYSILICON-GATE CMOS ICS
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