High resolution photoemission study of low-temperature oxidation on the Si(001) surface

被引:0
|
作者
Yeom, Han Woog [1 ]
Uhrberg, Roger [2 ]
机构
[1] Atom.-scale Surf. Sci. Res. Center, Inst. of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea, Republic of
[2] Dept. of Phys. and Msrmt. Technology, Linköping University, S-581 83 Linköping, Sweden
关键词
D O I
暂无
中图分类号
学科分类号
摘要
24
引用
收藏
页码:4460 / 4463
相关论文
共 50 条
  • [21] Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates
    Lee, NE
    Cahill, DG
    Greene, JE
    PHYSICAL REVIEW B, 1996, 53 (12): : 7876 - 7879
  • [22] High-resolution, low-temperature photoemission spectroscopy of Kondo semiconductor CeRhAs and related compounds
    Shimada, K
    Kobayashi, K
    Narimura, T
    Baltzer, P
    Namatame, H
    Taniguchi, M
    Suemitsu, T
    Sasakawa, T
    Takabatake, T
    PHYSICA B-CONDENSED MATTER, 2003, 329 : 576 - 577
  • [23] High-resolution and low-temperature photoemission spectroscopy at the HiSOR helical-undulator beamline
    Arita, M
    Shimada, K
    Namatame, H
    Taniguchi, M
    SURFACE REVIEW AND LETTERS, 2002, 9 (01) : 535 - 539
  • [24] LOW-TEMPERATURE NITRIDATION AND HYDROGENATION OF SI FILMS WITH NH3 - A PHOTOEMISSION-STUDY
    BISCHOFF, JL
    KUBLER, L
    BOLMONT, D
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1407 - 1410
  • [25] Oxidation of Nb(001) studied by high-resolution core-level photoemission
    Lo, WS
    Chen, HH
    Chien, TS
    Tsan, CC
    Fang, BS
    SURFACE REVIEW AND LETTERS, 1997, 4 (04) : 651 - 654
  • [26] A STUDY OF THE LOW-TEMPERATURE OXIDATION OF COAL
    ITAY, M
    HILL, CR
    GLASSER, D
    FUEL PROCESSING TECHNOLOGY, 1989, 21 (02) : 81 - 97
  • [27] DIRECT OBSERVATION OF AN INCREASE IN BUCKLED DIMERS ON SI(001) AT LOW-TEMPERATURE
    WOLKOW, RA
    PHYSICAL REVIEW LETTERS, 1992, 68 (17) : 2636 - 2639
  • [28] The formation of dislocations in the interface of GeSi/low-temperature Si buffer grown on Si (001)
    Peng, CS
    Li, YK
    Huang, Q
    Zhou, JM
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 740 - 743
  • [29] Low-temperature Si growth on Si (001): Impurity incorporation and limiting thickness for epitaxy
    Baribeau, JM
    Wu, X
    Lockwood, DJ
    Tay, L
    Sproule, GI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1479 - 1483
  • [30] Possibility of the quantum fluctuation of the Si(001) surface at low temperature
    Yoshimoto, Y
    Tsukada, M
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 277 - 278