Dislocation sources in sapphire (α-Al2O3) near microhardness indents

被引：0
|
作者：
Farber, Boris Ya [1 ]
Yoon, Seog-Young [1 ]
Lagerlog, D. [1 ]
Heuer, Arthur H. [1 ]
机构：
[1] Case Western Reserve Univ, Cleveland, United States
来源：
Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques | 1993年 / 84卷 / 06期
关键词：
Ceramic materials - Crystallography - Crystals - Semiconductor materials - Transmission electron microscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The operation of sources emitting dislocations on the basal plane of sapphire (α-Al2O3 single-crystals have been observed using TEM in the vicinity of hardness indentations. The structure of the sources and a mechanism for dislocation generation are discussed in terms of the crystallography of sapphire.
引用
下载
收藏
页码：426 / 430
相关论文
共 50 条
  • [41] Sintering behaviour and microstructures of Ti(Al,O)/Al2O3, Ti3Al(O)/Al2O3 and TiAl(O)/Al2O3 in situ composites
    Cai, ZH
    Zhang, DL
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2006, 419 (1-2): : 310 - 317
  • [42] OPTICAL REFLECTANCE METHOD FOR DETERMINING SURFACE QUALITY OF SAPPHIRE (AL2O3)
    ZANZUCCHI, PJ
    DUFFY, MT
    ALIG, RC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) : 299 - 305
  • [43] Shallow implantation of Ti+ ions in sapphire [α-Al2O3(0001)]
    Lee, H
    Lee, SM
    Ada, ET
    Kim, B
    Weiss, M
    Perry, SS
    Rabalais, JW
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 157 (1-4): : 226 - 232
  • [44] Hardening of rhombohedral twinning in sapphire (α-Al2O3) by basal slip dislocations
    Castaing, J
    Muñoz, A
    Rodriguez, AD
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 2002, 82 (07): : 1419 - 1431
  • [45] RADIATION HARD AL2O3 MOS DEVICES IN SILICON-ON-SAPPHIRE
    SCHLESIE.KM
    NORRIS, PE
    SHAW, JM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : C292 - &
  • [46] SPECULAR TRANSMITTANCE OF SAPPHIRE AND POLYCRYSTALLINE AL2O3 TO 1500DEGREESC
    RHODES, WH
    HAUGSJAA, PO
    AMERICAN CERAMIC SOCIETY BULLETIN, 1977, 56 (03): : 303 - 303
  • [47] AL K-ALPHA SATELLITE POLARIZATION MEASUREMENTS IN METAL AND IN SAPPHIRE (AL2O3)
    PETUKHOV, VP
    TOROK, I
    ZAVODSZKY, P
    PALINKAS, J
    SARKADI, L
    BLOKHIN, SM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 75 (1-4): : 17 - 19
  • [48] Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3)
    Hieke, S. W.
    Dehm, G.
    Scheu, C.
    ACTA MATERIALIA, 2017, 140 : 355 - 365
  • [49] Boron Emitter Passivation With Al2O3 and Al2O3/SiNx Stacks Using ALD Al2O3
    Richter, Armin
    Benick, Jan
    Hermle, Martin
    IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (01): : 236 - 245
  • [50] Oxidation of volatile organic compounds on Al2O3, Pd/Al2O3, and PdO/Al2O3 catalysts
    Cordi, EM
    Falconer, JL
    JOURNAL OF CATALYSIS, 1996, 162 (01) : 104 - 117
12345