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Dislocation sources in sapphire (α-Al2O3) near microhardness indents

被引：0
|
作者：
Farber, Boris Ya [1 ]
Yoon, Seog-Young [1 ]
Lagerlog, D. [1 ]
Heuer, Arthur H. [1 ]
机构：
[1] Case Western Reserve Univ, Cleveland, United States
来源：
Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques | 1993年 / 84卷 / 06期
关键词：
Ceramic materials - Crystallography - Crystals - Semiconductor materials - Transmission electron microscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The operation of sources emitting dislocations on the basal plane of sapphire (α-Al2O3 single-crystals have been observed using TEM in the vicinity of hardness indentations. The structure of the sources and a mechanism for dislocation generation are discussed in terms of the crystallography of sapphire.
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页码：426 / 430
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