Dislocation sources in sapphire (α-Al2O3) near microhardness indents

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作者
Farber, Boris Ya [1 ]
Yoon, Seog-Young [1 ]
Lagerlog, D. [1 ]
Heuer, Arthur H. [1 ]
机构
[1] Case Western Reserve Univ, Cleveland, United States
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Ceramic materials - Crystallography - Crystals - Semiconductor materials - Transmission electron microscopy;
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摘要
The operation of sources emitting dislocations on the basal plane of sapphire (α-Al2O3 single-crystals have been observed using TEM in the vicinity of hardness indentations. The structure of the sources and a mechanism for dislocation generation are discussed in terms of the crystallography of sapphire.
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页码:426 / 430
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