共 50 条
- [31] DEPENDENCE OF THERMOELECTRIC POWER OF N-TYPE GE ON TEMPERATURE AND PRESSURE IN MIXED CONDUCTION REGION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 2073 - +
- [32] TEMPERATURE DEPENDENCE OF ANISOTROPIC DRIFT VELOCITY OF HOT-ELECTRONS IN N-TYPE GE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 891 - &
- [33] HALL MOBILITY OF ELECTRONS IN HEAVILY DOPED N-TYPE GERMANIUM SOVIET PHYSICS-SOLID STATE, 1962, 3 (11): : 2545 - 2548
- [34] TEMPERATURE DEPENDENCE OF RATE OF FALL OF ELECTRON DENSITY IN N-TYPE GE AND N-TYPE SI DURING FAST-NEUTRON IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1569 - +
- [36] MOBILITY OF HOLES IN N-TYPE GE BOMBARDED BY FAST NEUTRONS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 397 - &
- [37] CONCENTRATION-DEPENDENCE OF HALL FACTOR IN N-TYPE SILICON PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 23 (02): : K123 - K127
- [38] CONCENTRATION DEPENDENCE OF HALL COEFFICIENT ANISOTROPY IN N-TYPE GERMANIUM SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (10): : 2463 - &
- [39] INFLUENCE OF ELECTRON-ELECTRON SCATTERING ON HALL-EFFECT IN N-TYPE GE AND N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 528 - 529