Saturation of hole concentration in carbon-doped GaAs grown by metalorganic chemical vapor deposition

被引:0
|
作者
NTT System Electronics Labs, Kanagawa, Japan [1 ]
机构
来源
J Cryst Growth | / 1-2卷 / 30-36期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] CARBON-DOPED BASE GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING CARBON-TETRACHLORIDE AS A DOPANT SOURCE
    CUNNINGHAM, BT
    STILLMAN, GE
    JACKSON, GS
    APPLIED PHYSICS LETTERS, 1990, 56 (04) : 361 - 363
  • [22] Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition
    Yang, Q
    Scott, DS
    Chung, T
    Stillman, GE
    APPLIED PHYSICS LETTERS, 2000, 77 (02) : 271 - 273
  • [23] Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition
    Kim, KS
    Cheong, MG
    Hong, CH
    Yang, GM
    Lim, KY
    Suh, EK
    Lee, HJ
    APPLIED PHYSICS LETTERS, 2000, 76 (09) : 1149 - 1151
  • [24] SATURATION OF SI ATOM CONCENTRATION IN SI PLANAR-DOPED INP LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    ISHIKAWA, H
    MIWA, S
    MARUYAMA, T
    KAMADA, M
    APPLIED PHYSICS LETTERS, 1991, 58 (08) : 851 - 853
  • [25] SI-DOPED GAAS EPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    OKAMOTO, K
    ONOZAWA, S
    IMAI, T
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2993 - 2995
  • [26] CARBON MODULATION-DOPED P-ALGAAS/GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    MAKIMOTO, T
    CHANG, SS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (6B): : L797 - L798
  • [27] CARBON-DOPED GAAS GROWN IN LOW PRESSURE-METALORGANIC VAPOR-PHASE EPITAXY USING CARBON TETRABROMIDE
    RICHTER, E
    KURPAS, P
    GUTSCHE, D
    WEYERS, M
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1719 - 1722
  • [28] InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
    Heinrichsdorff, F
    Krost, A
    Kirstaedter, N
    Mao, MH
    Grundmann, M
    Bimberg, D
    Kosogov, AO
    Werner, P
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 4129 - 4133
  • [29] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    WANG, CH
    CHENG, KY
    YANG, SJ
    APPLIED PHYSICS LETTERS, 1985, 46 (10) : 962 - 964
  • [30] CHARACTERIZATION OF GAAS FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    SWAMINATHAN, V
    VANHAREN, DL
    ZILKO, JL
    LU, PY
    SCHUMAKER, NE
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5349 - 5353